smd type ic smd type ic KRF7401 features generation v technology ultra low on-resistance n-channel mosfet surface mount available in tape & reel dynamic dv/dt rating fast switching absolute maximum ratings ta = 25 parameter symbol rating unit 10 sec. pulsed drain current, v gs @4.5v,ta=25 i d 10 continuous drain current, v gs @4.5v,ta=25 i d 8.7 continuous drain current, v gs @4.5v,t c =70 i d 7 pulsed drain current*1 i dm 35 power dissipation p d 2.5 w linear derating factor 0.02 w/ gate-to-source voltage v gs 12 v peak diode recovery dv/dt*2 dv/dt 5 v/ns operating junction and storage temperature range t j ,t stg -55to+150 maximum junction-to-ambient r ja 50 /w *1 repetitive rating; pulse width limited by max. junction temperature. *2 isd 4.1a, d i /d t 100a/ s, v dd v (br)dss ,t j 150 a product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-to-source breakdown voltage v (br)dss v gs =0v,i d = 250a 20 v breakdown voltage temp. coefficient v(br)dss / t j i d = 1ma,reference to 25 0.044 v/ v gs =4.5v,i d = 4.1a*1 0.022 v gs =2.7v,i d = 3.5a*1 0.030 gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 0.70 v forward transconductance g fs v ds = 15v, i d =4.1a*1 11 s v ds = 16v, v gs =0v 1.0 v ds = 16v, v gs =0v,t j = 125 25 gate-to-source forward leakage v gs = 12v 100 gate-to-source reverse leakage v gs = -12v -100 total gate charge q g i d =4.1a 48 gate-to-source charge q gs v ds = 16v 5.1 gate-to-drain ("miller") charge q gd v gs =4.5v,*1 20 turn-on delay time t d(on) v dd = 10v 13 rise time t r i d =4.1a 72 turn-off delay time t d(off) r g =6.0 65 fall time t f r d =2.4 *1 92 intermal drain inductance l d 2.5 internal source inductance l s 4.0 input capacitance c iss v gs = 0v 1600 output capacitance c oss v ds = 15v 690 reverse transfer capacitance c rss ?= 1.0mhz 310 continuous source current body diode) i s 3.1 pulsed source current body diode) *2 i sm 35 diode forward voltage v sd t j =25 ,i s =2.0a,v gs =0v*1 1.0 v reverse recovery time t rr t j =25 ,i f =4.1a 39 59 ns reverse recoverycharge q rr d i /d t = 100a/ s*1 42 63 c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) *1 pulse width 300 s; duty cycle 2%. *2 repetitive rating; pulse width limited bymax pf a i gss nh na nc i dss ns r ds(on) static drain-to-source on-resistance drain-to-source leakage current a smd type ic smd type ic KRF7401 product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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